t4 - lds -0 278 , rev . 2 ( 11/1 9 /13 ) ?201 3 microsemi corporation page 1 of 7 1n613 8a C 1n6173a available on commercial versions v oidless h ermetically s ealed b idirectional t ransient v oltage s uppressors qualified to mil -prf- 19500/516 qualified levels : jan, jantx, jantxv and jans description this series of industry recognized voidless, hermetically sealed bidir ectional transient voltage suppressor s (tvs) are military qualified to mil - prf - 19500/516 and are ideal for high - reliability applications where a failure cannot be tol erated. they provide a w orking p eak s tandoff v oltage selection from 5. 2 to 152 volts with a 1500 w rating for a 10/1000 s pulse . they are very robust in hard -glass construction and use internal category 1 metallurgical bonds for high reliabilit y . the se devices are available as both a non - suffix part and an a version part involving different voltage tolerances as described in the nomenclature section . these devices are also available in a surface mount melf package configuration. c package also available in : c sq - melf package (surface mount) 1n613 8 us C 1n6173 us important: for the latest information, visit our website http://www.microsemi.com . features ? high surge current and peak pulse power provides transient voltage protection for sensitive circuits ? triple - layer passivation ? internal category 1 metallurgical bonds ? voidless hermetically sealed glass package ? jan, jantx, jantxv and jans qu alified versions are available per mil - prf - 19500/516 . (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade on ly) applications / benefits ? military and other high - reliability applications ? extr emely robust construction ? extensive range in w orking p eak s tandoff v oltage (v wm ) from 5. 2 to 152 volts ? 1500 w att p eak p ulse p ower (p pp ) for a 10/1000 us test pulse ? esd a nd eft protection per iec6100 -4- 2 and iec61000 -4- 4 respectively ? protection from the secondary effects of lightning per select levels in iec61000 -4- 5. ? flexible axial - leaded mounting terminals ? non - sensitive to esd per mil - s td - 750 m ethod 1020 ? inherently radiation hard as described in microsemi micronote 050 m axim um ratings @ t a = 25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fa x: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg -5 5 to + 175 o c thermal resistance junction - to - lead (1) r ? jl 20 o c /w peak pulse power @ 25 oc p pp 1500 w off - state power @ t l = 75 o c (1) p d 5.0 w off - state power @ t a = 25 o c (2) p d 3.0 w impulse repetition rate df 0.01 % solder temperature @ 10 s t sp 2 60 o c notes : 1. at 3/8 inch lead length from body (see f igure 4 ). 2. steady - state power ratings with reference to ambient are for pc boards where the rmal resistance from mounting point to ambient is sufficiently controlled where t op or t j(max) is not exceeded (also see f igure 6 ) . downloaded from: http:///
t4 - lds -0 278 , rev . 2 ( 11/1 9 /13 ) ?201 3 microsemi corporation page 2 of 7 1n613 8a C 1n6173a mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs ? terminals: axial - leads are t in/ l ead over c opper. rohs complian t matte -t in is available on commercial grade only. ? marking: body paint and part number ? polarity: no polarity marking for these bidirectional tvss ? tape & ree l option: standard per eia - 296. consult factory for quantities. ? w eight: approximately 1270 m illigrams ? see p ackage d imensions on last page. part nomenclature jan 1n61 38 a e3 reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = c ommercial jedec type n umber see electrical characteristics t able rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant voltage tolerance a = standard blank =5% higher v c , 5% lower min . v (br) and 5% lower i pp symbols & definitions symbol definition v( br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature that caused it expressed in %/ c or mv/ c. v ( br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. i d standby current: the current through the device at rated stand - off volta ge. v c clamping voltage: the voltage across the device in a region of low differential resistance duri ng the application of an impulse current (i pp ) for a specified waveform. p pp peak pulse power. the rated random recurring peak impulse power or rated nonrepetitive peak impulse power . the impulse power is the maximum - rated value of the product of i pp and v c . downloaded from: http:///
t4 - lds -0 278 , rev . 2 ( 11/1 9 /13 ) ?201 3 microsemi corporation page 3 of 7 1n613 8a C 1n6173a electrical characteristics industry type number (note 1) minimum breakdown voltage (note 1) v (br) @ i (br) rated standoff voltage v wm maximum standby current i d @ v wm maximum clamping voltage (note 1) v c @ i pp maximum peak pulse current (note 1) i pp maximum temp. coef. of v ( br) v (br) volts ma v a volts amps %/ o c 1n6138a 6.46 175 5.2 500 10.5 142.8 0.05 1n6139a 7.13 175 5.7 300 11.2 133.9 .06 1n6140a 7.79 150 6.2 100 12.1 124.0 .06 1n6141a 8.65 150 6.9 100 13.4 111.9 .06 1n6142a 9.50 125 7.6 100 14.5 103.4 .07 1n6143a 10.45 125 8.4 20 15.6 96.2 .07 1n6144a 11.40 100 9.1 20 16.9 88.8 .07 1n6145a 12.35 100 9.9 20 18.2 82.4 .08 1n6146a 14.25 75 11.4 20 21.0 71.4 .08 1n6147a 15.20 75 12.2 20 22.3 67.3 .08 1n6148a 17.10 65 13.7 10 25.1 59.8 .085 1n6149a 19.0 65 15.2 5 27.7 54.2 .085 1n6150a 20.9 50 16.7 5 30.5 49.2 .085 1n6151a 22.8 50 18.2 5 33.3 45.0 .09 1n6152a 25.7 50 20.6 5 37.4 40.1 .09 1n6153a 28.5 40 22.8 5 41.6 36.0 .09 1n6154a 31.4 40 25.1 5 45.7 32.8 .095 1n6155a 34.2 30 27.4 5 49.9 30.1 .095 1n6156a 37.1 30 29.7 5 53.6 28.0 .095 1n6157a 40.9 30 32.7 5 59.1 25.4 .095 1n6158a 44.7 25 35.8 5 64.6 23.2 .095 1n6159a 48.5 25 38.8 5 70.1 21.4 .095 1n6160a 53.2 20 42.6 5 77.0 19.5 .095 1n6161a 58.9 20 47.1 5 85.3 17.6 .100 1n6162a 64.6 20 51.7 5 97.1 15.4 .100 1n6163a 71.3 20 56.0 5 103.1 14.5 .100 1n6164a 77.9 15 62.2 5 112.8 13.3 .100 1n6165a 86.5 15 69.2 5 125.1 12.0 .100 1n6166a 95.0 12 76.0 5 137.6 10.9 .100 1n6167a 104.5 12 86.6 5 151.3 9.9 .100 1n6168a 114.0 10 91.2 5 165.1 9.1 .100 1n6169a 123.5 10 98.8 5 178.8 8.4 .105 1n6170a 142.5 8 114.0 5 206.3 7.3 .105 1n6171a 152.0 8 121.6 5 218.4 6.9 .105 1n6172a 171.0 5 136.8 5 245.7 6.1 .110 1n6173a 190.0 5 152.0 5 273.0 5.5 .110 notes: 1. part number without the a suffix has 5% higher v c , 5% lower minimum v (br) , and 5% lower i pp . downloaded from: http:///
t4 - lds -0 278 , rev . 2 ( 11/1 9 /13 ) ?201 3 microsemi corporation page 4 of 7 1n613 8a C 1n6173a graphs puls e time (t p ) figure 1 peak pulse power vs. pulse time junction temperature (t j ) in c figure 2 peak pulse power vs t j (prior to impulse) peak pulse power (p pp ) max peak pulse power (p pp ) or current (i pp ) in percent of max ratings downloaded from: http:///
t4 - lds -0 278 , rev . 2 ( 11/1 9 /13 ) ?201 3 microsemi corporation page 5 of 7 1n613 8a C 1n6173a graphs time (t) in milliseconds figure 3 pulse wave form t a (c) (ambient) figure 4 temperature - power derating curve pulse current (i pp) in percent of i pp dc operation (w) maximum rati ng downloaded from: http:///
t4 - lds -0 278 , rev . 2 ( 11/1 9 /13 ) ?201 3 microsemi corporation page 6 of 7 1n613 8a C 1n6173a graphs ambient temperature (t a ) in c figure 5 steady - state derating curve for free - air mounting (r ja = 50 oc /w) maximum steady - state power in watts downloaded from: http:///
t4 - lds -0 278 , rev . 2 ( 11/1 9 /13 ) ?201 3 microsemi corporation page 7 of 7 1n613 8a C 1n6173a package dimensions l tr d imensions not es i nches m illime te rs min max min max bd 0.1 35 0. 185 3.43 4. 70 3 bl 0 .140 0 .195 3.56 4.95 ld 0 .036 0 .042 0.91 1. 07 ll 1.00 1.30 25.4 33 . 02 l1 - 0 .030 - 0.76 4 sc hematic sy m bo l not es: 1 . d imension s a re in inches . 2 . m illime te rs a re gi ven fo r gene ral in for ma t io n onl y. 3 . dimension bd shall be measured at the largest diameter . 4 . dimension l1 lead diameter uncontrolled in this area . 5 . in acco r danc e wi th as m e y 14 .5m, diame te rs a re equi v alen t to x sy mbolog y. downloaded from: http:///
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